文献
J-GLOBAL ID:201602250324142904
整理番号:16A1405080
Al/GO PEDOTにおけるバイポーラ抵抗スイッチング:PSS/Ptメモリ素子【Powered by NICT】
Bipolar resistive switching in Al/GO-PEDOT:PSS/Pt memory devices
著者 (6件):
Chao Hong
(Institute of Microelectronics, Tsinghua University, Beijing 100084, China)
,
Yuan Fang-Yuan
(Institute of Microelectronics, Tsinghua University, Beijing 100084, China)
,
Wu Huaqiang
(Institute of Microelectronics, Tsinghua University, Beijing 100084, China)
,
Deng Ning
(Institute of Microelectronics, Tsinghua University, Beijing 100084, China)
,
Wang Chongjie
(State Key Laboratory of Organic-Inorganic Composites, Department of Polymer Engineering, College of Materials Science and Engineering, Beijing University of Chemical Technology, Beijing 100029, China)
,
Wei Rongshan
(School of Physics and Information, College of Materials, Fuzhou University, Fuzhou 350116, China)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
EDSSC
ページ:
74-77
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)