文献
J-GLOBAL ID:201602256416906785
整理番号:16A0817879
MBE成長させた高抵抗エピタキシャル層を有する垂直Au/βGa_2O_3単結晶Schottkyフォトダイオードの特性化【Powered by NICT】
Characterization of vertical Au/β-Ga_2O_3 single-crystal Schottky photodiodes with MBE-grown high-resistivity epitaxial layer
著者 (4件):
Liu X Z
(School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China)
,
Yue C
(School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China)
,
Xia C T
(Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences)
,
Zhang W L
(School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China)
資料名:
Chinese Physics B
(Chinese Physics B)
巻:
25
号:
1
ページ:
017201-1-017201-5
発行年:
2016年01月
JST資料番号:
W1539A
ISSN:
1674-1056
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
中国 (CHN)
言語:
英語 (EN)