文献
J-GLOBAL ID:201602266327141965
整理番号:16A0977859
超低電圧応用のための28nm FDSOI技術サブ6V SRAM Vmin評価【Powered by NICT】
28nm FDSOI technology sub-0.6V SRAM Vmin assessment for ultra low voltage applications
著者 (21件):
Ranica R.
(STMicroelectronics, Switzerland)
,
Planes N.
(STMicroelectronics, Switzerland)
,
Huard V.
(CEA-LETI, 850 rue Jean Monnet, 38926 Crolles, France)
,
Weber O.
(STMicroelectronics, Switzerland)
,
Noblet D.
(STMicroelectronics, Switzerland)
,
Croain D.
(STMicroelectronics, Switzerland)
,
Giner F.
(STMicroelectronics, Switzerland)
,
Naudet S.
(STMicroelectronics, Switzerland)
,
Mergault P.
(STMicroelectronics, Switzerland)
,
Ibars S.
(STMicroelectronics, Switzerland)
,
Villaret A.
(STMicroelectronics, Switzerland)
,
Parra M.
(STMicroelectronics, Switzerland)
,
Haendler S.
(STMicroelectronics, Switzerland)
,
Quoirin M.
(STMicroelectronics, Switzerland)
,
Cacho F.
(STMicroelectronics, Switzerland)
,
Julien C.
(STMicroelectronics, Switzerland)
,
Terrier F.
(STMicroelectronics, Switzerland)
,
Ciampolini L.
(STMicroelectronics, Switzerland)
,
Turgis D.
(STMicroelectronics, Switzerland)
,
Lecocq C.
(STMicroelectronics, Switzerland)
,
Arnaud F.
(STMicroelectronics, Switzerland)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
VLSI Circuits
ページ:
1-2
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)