文献
J-GLOBAL ID:201602275731446665
整理番号:16A0836115
カーボンで調整されたゲルマニウムドット形成に於けるSi-C反応温度とゲルマニウム厚みの最適化
Optimization of Si-C reaction temperature and Ge thickness in C-mediated Ge dot formation
著者 (4件):
Satoh Yuhki
(Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, 6-6-05, Aza-Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan)
,
Itoh Yuhki
(Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, 6-6-05, Aza-Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan)
,
Kawashima Tomoyuki
(Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, 6-6-05, Aza-Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan)
,
Washio Katsuyoshi
(Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, 6-6-05, Aza-Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan)
資料名:
Thin Solid Films
(Thin Solid Films)
巻:
602
ページ:
29-31
発行年:
2016年03月01日
JST資料番号:
B0899A
ISSN:
0040-6090
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)