文献
J-GLOBAL ID:201602285854231617
整理番号:16A0726807
二重イオンビームスパッタGaにおけるバンドアラインメント研究とプラズモン発生:ZnO/Ga:MgZnOヘテロ接合界面【Powered by NICT】
Band alignment study and plasmon generation at dual ion-beam sputtered Ga:ZnO/ Ga:MgZnO heterojunction interface
著者 (8件):
Awasthi Vishnu
(Hybrid Nanodevice Research Group (HNRG), Electrical Engineering, Indian Institute of Technology, Indore-452020, India)
,
Garg Vivek
(Hybrid Nanodevice Research Group (HNRG), Electrical Engineering, Indian Institute of Technology, Indore-452020, India)
,
Sengar Brajendra S.
(Hybrid Nanodevice Research Group (HNRG), Electrical Engineering, Indian Institute of Technology, Indore-452020, India)
,
Singh Rohit
(Hybrid Nanodevice Research Group (HNRG), Electrical Engineering, Indian Institute of Technology, Indore-452020, India)
,
Pandey Sushil Kumar
(Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India)
,
Kumar Shailendra
(Indus Synchrotron Utilization Division, Raja Ramanna Center for Advanced Technology, Indore-452013, India)
,
Mukherjee C.
(Laser System Engineering Division, Raja Ramanna Center for Advanced Technology, Indore-452013, India)
,
Mukherjee Shaibal
(Hybrid Nanodevice Research Group (HNRG), Electrical Engineering, Indian Institute of Technology, Indore-452020, India)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
CSW
ページ:
1-2
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)