文献
J-GLOBAL ID:201602292091470180
整理番号:16A1286048
InGaP/GaAs及びSi結晶の「スマートスタック」三重接合細胞【Powered by NICT】
A “smart stack” triple-junction cell consisting of InGaP/GaAs and crystalline Si
著者 (9件):
Mizuno Hidenori
(Renewable Energy Research Center, Fukushima Renewable Energy Institute, National Institute of Advanced Industrial Science and Technology, Koriyama, Fukushima, 963-0298, Japan)
,
Makita Kikuo
(Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, 305-8568, Japan)
,
Tayagaki Takeshi
(Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, 305-8568, Japan)
,
Mochizuki Toshimitsu
(Renewable Energy Research Center, Fukushima Renewable Energy Institute, National Institute of Advanced Industrial Science and Technology, Koriyama, Fukushima, 963-0298, Japan)
,
Takato Hidetaka
(Renewable Energy Research Center, Fukushima Renewable Energy Institute, National Institute of Advanced Industrial Science and Technology, Koriyama, Fukushima, 963-0298, Japan)
,
Sugaya Takeyoshi
(Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, 305-8568, Japan)
,
Mehrvarz Hamid
(Australian Centre for Advanced Photovoltaics (ACAP), School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney 2052, Australia)
,
Green Martin
(Australian Centre for Advanced Photovoltaics (ACAP), School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney 2052, Australia)
,
Ho-Baillie Anita
(Australian Centre for Advanced Photovoltaics (ACAP), School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney 2052, Australia)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
PVSC
ページ:
1923-1925
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)