文献
J-GLOBAL ID:201702221190440625
整理番号:17A0055453
銀基板上に成長させたAlGaN/GaN/AlN FETの高信頼性長期運転【Powered by NICT】
Highly reliable long-term operation of AlGaN/GaN/AlN HFETs grown on silver substrate
著者 (10件):
Fox A.
(Peter Gruenberg Institute (PGI-9), Forschungszentrum Juelich, 52425 Juelich, Germany)
,
Mikulics M.
(Peter Gruenberg Institute (PGI-9), Forschungszentrum Juelich, 52425 Juelich, Germany)
,
Marso M.
(Faculte ́ des Sciences, de la Technologie et de la Communication, Universite ́ du Luxembourg, L-1359 Luxembourg)
,
Kocan M.
(School of Electrical, Electronic and Computer Engineering, University of Western Australia, Crawley, WA, Australia)
,
Sofer Z.
(Dept. of Inorganic Chemistry, Institute of Chemical Technology, Prague, Technicka ́ 5, 166 28 Prague 6, Czech Republic)
,
Kordos P.
(Institute of Electronics and Photonics, Slovak Technical University, SK-81219 Bratislava, Slovak Republic)
,
Luth H.
(Peter Gruenberg Institute (PGI-9), Forschungszentrum Juelich, 52425 Juelich, Germany)
,
Schubert J.
(Peter Gruenberg Institute (PGI-9), Forschungszentrum Juelich, 52425 Juelich, Germany)
,
Grutzmacher D.
(Peter Gruenberg Institute (PGI-9), Forschungszentrum Juelich, 52425 Juelich, Germany)
,
Hardtdegen H.
(Peter Gruenberg Institute (PGI-9), Forschungszentrum Juelich, 52425 Juelich, Germany)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
ASDAM
ページ:
65-68
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)