文献
J-GLOBAL ID:201702221267844099
整理番号:17A1421088
単一蒸発源を用いた非晶質SiでキャップされたBaSi_2薄膜の作製【Powered by NICT】
Fabrication of BaSi2 thin films capped with amorphous Si using a single evaporation source
著者 (7件):
Hara Kosuke O.
(Center for Crystal Science and Technology, University of Yamanashi, 7-32 Miyamae, Kofu, Yamanashi 400-8511, Japan)
,
Trinh Cham Thi
(Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan)
,
Kurokawa Yasuyoshi
(Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan)
,
Arimoto Keisuke
(Center for Crystal Science and Technology, University of Yamanashi, 7-32 Miyamae, Kofu, Yamanashi 400-8511, Japan)
,
Yamanaka Junji
(Center for Crystal Science and Technology, University of Yamanashi, 7-32 Miyamae, Kofu, Yamanashi 400-8511, Japan)
,
Nakagawa Kiyokazu
(Center for Crystal Science and Technology, University of Yamanashi, 7-32 Miyamae, Kofu, Yamanashi 400-8511, Japan)
,
Usami Noritaka
(Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan)
資料名:
Thin Solid Films
(Thin Solid Films)
巻:
636
ページ:
546-551
発行年:
2017年
JST資料番号:
B0899A
ISSN:
0040-6090
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)