文献
J-GLOBAL ID:201702238081600454
整理番号:17A0181214
8」Si基板上のAlGaInP多重量子井戸と発光ダイオードのエピタクシーとウエハボンディング【Powered by NICT】
Epitaxy and wafer bonding of AlGalnP multiple-quantum wells and light-emitting diodes on 8” Si substrates
著者 (8件):
Wang Bing
(Low Energy Electronic Systems IRG (LEES), Singapore-MIT Alliance for Research and Technology, 1 Create Way, Singapore 138602)
,
Lee Kwang Hong
(Low Energy Electronic Systems IRG (LEES), Singapore-MIT Alliance for Research and Technology, 1 Create Way, Singapore 138602)
,
Bao Shuyu
(Low Energy Electronic Systems IRG (LEES), Singapore-MIT Alliance for Research and Technology, 1 Create Way, Singapore 138602)
,
Wang Cong
(Low Energy Electronic Systems IRG (LEES), Singapore-MIT Alliance for Research and Technology, 1 Create Way, Singapore 138602)
,
Tan Chuan Seng
(Low Energy Electronic Systems IRG (LEES), Singapore-MIT Alliance for Research and Technology, 1 Create Way, Singapore 138602)
,
Yoon Soon Fatt
(Low Energy Electronic Systems IRG (LEES), Singapore-MIT Alliance for Research and Technology, 1 Create Way, Singapore 138602)
,
Fitzgerald Eugene A.
(Low Energy Electronic Systems IRG (LEES), Singapore-MIT Alliance for Research and Technology, 1 Create Way, Singapore 138602)
,
Michel Jurgen
(Low Energy Electronic Systems IRG (LEES), Singapore-MIT Alliance for Research and Technology, 1 Create Way, Singapore 138602)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
IPC
ページ:
791-792
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)