文献
J-GLOBAL ID:201702239023358941
整理番号:17A0214292
急傾斜地電界効果トランジスタのためのライナTiNをAgTe/TiO-2に基づくしきい値スイッチング素子のモノリシック集積化【Powered by NICT】
Monolithic integration of AgTe/TiO2 based threshold switching device with TiN liner for steep slope field-effect transistors
著者 (8件):
Song Jeonghwan
(Dept. of Mat. Sci. and Eng., Pohang University of Science and Technology (POSTECH), Pohang, Korea)
,
Park Jaehyuk
(Dept. of Mat. Sci. and Eng., Pohang University of Science and Technology (POSTECH), Pohang, Korea)
,
Moon Kibong
(Dept. of Mat. Sci. and Eng., Pohang University of Science and Technology (POSTECH), Pohang, Korea)
,
Woo Jiyong
(Dept. of Mat. Sci. and Eng., Pohang University of Science and Technology (POSTECH), Pohang, Korea)
,
Lim Seokjae
(Dept. of Mat. Sci. and Eng., Pohang University of Science and Technology (POSTECH), Pohang, Korea)
,
Yoo Jongmyung
(Dept. of Mat. Sci. and Eng., Pohang University of Science and Technology (POSTECH), Pohang, Korea)
,
Lee Dongwook
(Dept. of Mat. Sci. and Eng., Pohang University of Science and Technology (POSTECH), Pohang, Korea)
,
Hwang Hyunsang
(Dept. of Mat. Sci. and Eng., Pohang University of Science and Technology (POSTECH), Pohang, Korea)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
IEDM
ページ:
25.3.1-25.3.4
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)