文献
J-GLOBAL ID:201702243260220064
整理番号:17A0214332
SRB上のSiGe pMOSFETの負バイアス温度不安定性(NBTI)に及ぼすアクセプタ様トラップ効果【Powered by NICT】
Acceptor-like trap effect on negative-bias temperature instability (NBTI) of SiGe pMOSFETs on SRB
著者 (12件):
Jiao Guangfan
(Semiconductor R&D Center, Samsung Electronics Hwasung-City, Gyeonggi-Do, Korea)
,
Toledano-Luque Maria
(Semiconductor R&D Center, Samsung Electronics Hwasung-City, Gyeonggi-Do, Korea)
,
Nam Kab-Jin
(Semiconductor R&D Center, Samsung Electronics Hwasung-City, Gyeonggi-Do, Korea)
,
Toshiro Nakanishi
(Semiconductor R&D Center, Samsung Electronics Hwasung-City, Gyeonggi-Do, Korea)
,
Lee Seung-Hun
(Semiconductor R&D Center, Samsung Electronics Hwasung-City, Gyeonggi-Do, Korea)
,
Kim Jin-Soak
(Semiconductor R&D Center, Samsung Electronics Hwasung-City, Gyeonggi-Do, Korea)
,
Kauerauf Thomas
(Semiconductor R&D Center, Samsung Electronics Hwasung-City, Gyeonggi-Do, Korea)
,
Chung EunAe
(Semiconductor R&D Center, Samsung Electronics Hwasung-City, Gyeonggi-Do, Korea)
,
Bae Dong-il
(Semiconductor R&D Center, Samsung Electronics Hwasung-City, Gyeonggi-Do, Korea)
,
Bae Geumjong
(Semiconductor R&D Center, Samsung Electronics Hwasung-City, Gyeonggi-Do, Korea)
,
Kim Dong-Won
(Semiconductor R&D Center, Samsung Electronics Hwasung-City, Gyeonggi-Do, Korea)
,
Hwang Kihyun
(Semiconductor R&D Center, Samsung Electronics Hwasung-City, Gyeonggi-Do, Korea)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
IEDM
ページ:
31.2.1-31.2.4
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)