文献
J-GLOBAL ID:201702253089800902
整理番号:17A0214216
サブ60mV/サブしきい値スイング,無視できるヒステリシス,と改良されたI_dsを持つ強誘電性HfZrO_x GeとGeSn PMOSFET【Powered by NICT】
Ferroelectric HfZrOx Ge and GeSn PMOSFETs with Sub-60 mV/decade subthreshold swing, negligible hysteresis, and improved Ids
著者 (10件):
Zhou Jiuren
(State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, Shaanxi 710071, China)
,
Han Genquan
(State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, Shaanxi 710071, China)
,
Li Qinglong
(State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, Shaanxi 710071, China)
,
Peng Yue
(State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, Shaanxi 710071, China)
,
Lu Xiaoli
(State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, Shaanxi 710071, China)
,
Zhang Chunfu
(State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, Shaanxi 710071, China)
,
Zhang Jincheng
(State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, Shaanxi 710071, China)
,
Sun Qing-Qing
(State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China)
,
Zhang David Wei
(State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China)
,
Hao Yue
(State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, Shaanxi 710071, China)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
IEDM
ページ:
12.2.1-12.2.4
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)