文献
J-GLOBAL ID:201702268642490372
整理番号:17A0214212
強誘電体FETに基づく28nmH KMG超低電力組み込みNVM技術【Powered by NICT】
A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs
著者 (18件):
Trentzsch M.
(GLOBALFOUNDRIES Fab1 LLC & Co. KG, Dresden, Germany)
,
Flachowsky S.
(GLOBALFOUNDRIES Fab1 LLC & Co. KG, Dresden, Germany)
,
Richter R.
(GLOBALFOUNDRIES Fab1 LLC & Co. KG, Dresden, Germany)
,
Paul J.
(GLOBALFOUNDRIES Fab1 LLC & Co. KG, Dresden, Germany)
,
Reimer B.
(GLOBALFOUNDRIES Fab1 LLC & Co. KG, Dresden, Germany)
,
Utess D.
(GLOBALFOUNDRIES Fab1 LLC & Co. KG, Dresden, Germany)
,
Jansen S.
(GLOBALFOUNDRIES Fab1 LLC & Co. KG, Dresden, Germany)
,
Mulaosmanovic H.
(NaMLab gGmbH, Dresden, Germany)
,
Muller S.
(NaMLab gGmbH, Dresden, Germany)
,
Slesazeck S.
(NaMLab gGmbH, Dresden, Germany)
,
Ocker J.
(NaMLab gGmbH, Dresden, Germany)
,
Noack M.
(NaMLab gGmbH, Dresden, Germany)
,
Muller J.
(Fraunhofer IPMS, Dresden, Germany)
,
Polakowski P.
(Fraunhofer IPMS, Dresden, Germany)
,
Schreiter J.
(RacyICs GmbH, Dresden, Germany)
,
Beyer S.
(GLOBALFOUNDRIES Fab1 LLC & Co. KG, Dresden, Germany)
,
Mikolajick T.
(NaMLab gGmbH, Dresden, Germany)
,
Rice B.
(GLOBALFOUNDRIES Fab1 LLC & Co. KG, Dresden, Germany)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
IEDM
ページ:
11.5.1-11.5.4
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)