文献
J-GLOBAL ID:201702269913880472
整理番号:17A0181221
404nm GaNレーザダイオードを用いた大消光比導波路変調器集積化を用いた可能になったGHz変調【Powered by NICT】
GHz modulation enabled using large extinction ratio waveguide-modulator integrated with 404 nm GaN laser diode
著者 (9件):
Shen Chao
(Photonics Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal 21534, Saudi Arabia)
,
Lee Changmin
(Materials Department, University of California Santa Barbara, Santa Barbara (UCSB), CA 93106, USA)
,
Ng Tien Khee
(Photonics Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal 21534, Saudi Arabia)
,
Speck James S.
(Materials Department, University of California Santa Barbara, Santa Barbara (UCSB), CA 93106, USA)
,
Nakamura Shuji
(Materials Department, University of California Santa Barbara, Santa Barbara (UCSB), CA 93106, USA)
,
DenBaars Steven P.
(Materials Department, University of California Santa Barbara, Santa Barbara (UCSB), CA 93106, USA)
,
Alyamani Ahmed Y.
(King Abdulaziz City for Science and Technology (KACST), Riyadh 11442, Saudi Arabia)
,
Eldesouki Munir M.
(King Abdulaziz City for Science and Technology (KACST), Riyadh 11442, Saudi Arabia)
,
Ooi Boon S.
(Photonics Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal 21534, Saudi Arabia)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
IPC
ページ:
813-814
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)