文献
J-GLOBAL ID:201702277804384652
整理番号:17A0345842
GANベースHEMT構造に基づくセンサの研究進展【JST・京大機械翻訳】
Progress of Sensor Elements Based on GaN-based HEMT Structure
著者 (5件):
Zhu Yanxu
(Key Laboratory of Opto-electronics Technology,Ministry of Education,Beijing University of Technology)
,
Wang Yuehua
(Key Laboratory of Opto-electronics Technology,Ministry of Education,Beijing University of Technology)
,
Song Huihui
(Key Laboratory of Opto-electronics Technology,Ministry of Education,Beijing University of Technology)
,
Li Lailong
(Key Laboratory of Opto-electronics Technology,Ministry of Education,Beijing University of Technology)
,
Shi Dong
(Key Laboratory of Opto-electronics Technology,Ministry of Education,Beijing University of Technology)
資料名:
Faguang Xuebao
(Faguang Xuebao)
巻:
37
号:
12
ページ:
1545-1553
発行年:
2016年
JST資料番号:
W1380A
ISSN:
1000-7032
CODEN:
FAXUEW
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
中国 (CHN)
言語:
中国語 (ZH)