文献
J-GLOBAL ID:201702279576809017
整理番号:17A1359911
すべての優れたNBTI信頼性を有する装置周辺のSiで不活性化した歪んだGe pFinFETとゲートに及ぼす高圧アニールによる性能と静電改善【Powered by NICT】
Performance and electrostatic improvement by high-pressure anneal on Si-passivated strained Ge pFinFET and gate all around devices with superior NBTI reliability
著者 (16件):
Arimura H.
(imec, Kapeldreef 75, B-3001 Leuven, Belgium)
,
Witters L.
(imec, Kapeldreef 75, B-3001 Leuven, Belgium)
,
Cott D.
(imec, Kapeldreef 75, B-3001 Leuven, Belgium)
,
Dekkers H.
(imec, Kapeldreef 75, B-3001 Leuven, Belgium)
,
Loo R.
(imec, Kapeldreef 75, B-3001 Leuven, Belgium)
,
Mitard J.
(imec, Kapeldreef 75, B-3001 Leuven, Belgium)
,
Ragnarsson L.-A.
(imec, Kapeldreef 75, B-3001 Leuven, Belgium)
,
Wostyn K.
(imec, Kapeldreef 75, B-3001 Leuven, Belgium)
,
Boccardi G.
(imec, Kapeldreef 75, B-3001 Leuven, Belgium)
,
Chiu E.
(Poongsan, Sunnyvale CA, USA)
,
Subirats A.
(imec, Kapeldreef 75, B-3001 Leuven, Belgium)
,
Favia P.
(imec, Kapeldreef 75, B-3001 Leuven, Belgium)
,
Vancoille E.
(imec, Kapeldreef 75, B-3001 Leuven, Belgium)
,
De Heyn V.
(imec, Kapeldreef 75, B-3001 Leuven, Belgium)
,
Mocuta D.
(imec, Kapeldreef 75, B-3001 Leuven, Belgium)
,
Collaert N.
(imec, Kapeldreef 75, B-3001 Leuven, Belgium)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2017
号:
VLSI Technology
ページ:
T196-T197
発行年:
2017年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)