文献
J-GLOBAL ID:201702286733721466
整理番号:17A0214366
パワーデバイス応用のためのGaN表面の窒化:第一原理研究【Powered by NICT】
Nitridation of GaN surface for power device application: A first-principles study
著者 (7件):
Zhang Zhaofu
(Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong)
,
Li Baikui
(Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong)
,
Tang Xi
(Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong)
,
Qian Qingkai
(Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong)
,
Hua Mengyuan
(Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong)
,
Huang Baoling
(Department of Mechanical and Aerospace Engineering, The Hong Kong University of Science and Technology, Hong Kong)
,
Chen Kevin J.
(Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
IEDM
ページ:
36.2.1-36.2.4
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)