文献
J-GLOBAL ID:201802212668644778
整理番号:18A0910885
高密度集積化のための急峻な傾斜の負性容量FinFETの設計:適切な強誘電体キャパシタンスと短チャネル効果の重要性
Design of steep-slope negative-capacitance FinFETs for dense integration: Importance of appropriate ferroelectric capacitance and short-channel effects
著者 (7件):
OTA Hiroyuki
(National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
,
HATTORI Junichi
(National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
,
ASAI Hidehiro
(National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
,
IKEGAMI Tsutomu
(National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
,
FUKUDA Koichi
(National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
,
MIGITA Shinji
(National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
,
TORIUMI Akira
(Univ. Tokyo, Tokyo, JPN)
資料名:
Japanese Journal of Applied Physics
(Japanese Journal of Applied Physics)
巻:
57
号:
4S
ページ:
04FD03.1-04FD03.6
発行年:
2018年04月
JST資料番号:
G0520B
ISSN:
0021-4922
CODEN:
JJAPB6
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)