文献
J-GLOBAL ID:201802225147827454
整理番号:18A0091753
蓄積電荷測定を用いたポリ-3(ヘキシルチオフェン)/金属界面における正孔注入障壁の推定【Powered by NICT】
Estimation of hole injection barrier at the poly-3(hexylthiophene)/metal interface using accumulated charge measurement
著者 (6件):
Tajima Hiroyuki
(Graduate School of Material Science, University of Hyogo, 3-2-1 Kohto, Kamigori-cho, Ako-gun, Hyogo 678-1297, Japan)
,
Yasukawa Naoto
(Graduate School of Material Science, University of Hyogo, 3-2-1 Kohto, Kamigori-cho, Ako-gun, Hyogo 678-1297, Japan)
,
Nakatani Hisaki
(Graduate School of Material Science, University of Hyogo, 3-2-1 Kohto, Kamigori-cho, Ako-gun, Hyogo 678-1297, Japan)
,
Sato Seiichi
(Graduate School of Material Science, University of Hyogo, 3-2-1 Kohto, Kamigori-cho, Ako-gun, Hyogo 678-1297, Japan)
,
Kadoya Tomofumi
(Graduate School of Material Science, University of Hyogo, 3-2-1 Kohto, Kamigori-cho, Ako-gun, Hyogo 678-1297, Japan)
,
Yamada Jun-ichi
(Graduate School of Material Science, University of Hyogo, 3-2-1 Kohto, Kamigori-cho, Ako-gun, Hyogo 678-1297, Japan)
資料名:
Organic Electronics
(Organic Electronics)
巻:
51
ページ:
162-167
発行年:
2017年
JST資料番号:
W1352A
ISSN:
1566-1199
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)