文献
J-GLOBAL ID:201802236647908515
整理番号:18A0187829
III V/GeベーストンネルMOSFET【Powered by NICT】
III-V/Ge-based tunneling MOSFET
著者 (10件):
Takagi S.
(Department of Electrical Engineering and Information Systems, The University of Tokyo)
,
Ahn D.-H.
(Department of Electrical Engineering and Information Systems, The University of Tokyo)
,
Gotow T.
(Department of Electrical Engineering and Information Systems, The University of Tokyo)
,
Nishi K.
(Department of Electrical Engineering and Information Systems, The University of Tokyo)
,
Bae T.-E.
(Department of Electrical Engineering and Information Systems, The University of Tokyo)
,
Katoh T.
(Department of Electrical Engineering and Information Systems, The University of Tokyo)
,
Matsumura R.
(Department of Electrical Engineering and Information Systems, The University of Tokyo)
,
Takaguchi R.
(Department of Electrical Engineering and Information Systems, The University of Tokyo)
,
Kato K.
(Department of Electrical Engineering and Information Systems, The University of Tokyo)
,
Takenaka M.
(Department of Electrical Engineering and Information Systems, The University of Tokyo)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2017
号:
E3S
ページ:
1-3
発行年:
2017年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)