文献
J-GLOBAL ID:201802247660265674
整理番号:18A0615618
CVD反応器中のSi(100)表面の成長からの塩素原子の除去のための新しい経路【Powered by NICT】
Novel pathways for elimination of chlorine atoms from growing Si(100) surfaces in CVD reactors
著者 (4件):
Kunioshi Nilson
(Graduate School of Creative Science and Engineering, Waseda University, Japan)
,
Hagino Sho
(Graduate School of Creative Science and Engineering, Waseda University, Japan)
,
Fuwa Akio
(Graduate School of Creative Science and Engineering, Waseda University, Japan)
,
Yamaguchi Katsunori
(Graduate School of Creative Science and Engineering, Waseda University, Japan)
資料名:
Applied Surface Science
(Applied Surface Science)
巻:
441
ページ:
773-779
発行年:
2018年
JST資料番号:
B0707B
ISSN:
0169-4332
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)