文献
J-GLOBAL ID:201802259561460299
整理番号:18A0238874
B_3N_3と置換ドーピングによるグラフェンヘテロ構造のバンドギャップ工学【Powered by NICT】
Band-Gap Engineering of Graphene Heterostructures by Substitutional Doping with B3N3
著者 (6件):
Sawahata Hisaki
(Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, 305-8571, Japan)
,
Maruyama Mina
(Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, 305-8571, Japan)
,
Cuong Nguyen Thanh
(International Center for Young Scientists (ICYS), National Institute for Materials Science (NIMS), Tsukuba, 305-0044, Japan)
,
Omachi Haruka
(Department of Chemistry, Nagoya University, Nagoya, 464-8602, Japan)
,
Shinohara Hisanori
(Department of Chemistry, Nagoya University, Nagoya, 464-8602, Japan)
,
Okada Susumu
(Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, 305-8571, Japan)
資料名:
ChemPhysChem
(ChemPhysChem)
巻:
19
号:
2
ページ:
237-242
発行年:
2018年
JST資料番号:
W1265A
ISSN:
1439-4235
CODEN:
CPCHFT
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)