文献
J-GLOBAL ID:201802271719898192
整理番号:18A1903799
Si〈100〉デバイスにおける室温での局所磁気抵抗【JST・京大機械翻訳】
Local Magnetoresistance at Room Temperature in Si <100> Devices
著者 (5件):
Ishikawa Mizue
(Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, Suita, Japan)
,
Tsukahara Makoto
(Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, Suita, Japan)
,
Yamada Michihiro
(Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, Suita, Japan)
,
Saito Yoshiaki
(Corporate Research and Development Center, Toshiba Corporation, Kawasaki, Japan)
,
Hamaya Kohei
(Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, Suita, Japan)
資料名:
IEEE Transactions on Magnetics
(IEEE Transactions on Magnetics)
巻:
54
号:
11
ページ:
ROMBUNNO.1400604.1-4
発行年:
2018年
JST資料番号:
A0339B
ISSN:
0018-9464
CODEN:
IEMGAQ
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)