文献
J-GLOBAL ID:201802281673683375
整理番号:18A0575364
n型伝導を持つ薄膜に及ぼす焼なましのMn含有量と効果を変化させることによる強磁性(Zn,Sn,Mn)As_2薄膜における伝導型の制御【Powered by NICT】
Control of conduction type in ferromagnetic (Zn,Sn,Mn)As2 thin films by changing Mn content and effect of annealing on thin films with n-type conduction
著者 (7件):
Minamizawa Yuto
(Nagaoka University of Technology, Nagaoka, Niigata 940-2188, Japan)
,
Kitazawa Tomohiro
(Nagaoka University of Technology, Nagaoka, Niigata 940-2188, Japan)
,
Hidaka Shiro
(School of Science, Osaka University, 1-1 Yamadaoka, Suita, Osaka 565-0871, Japan)
,
Toyota Hideyuki
(Nagaoka University of Technology, Nagaoka, Niigata 940-2188, Japan)
,
Nakamura Shin-ichi
(Aoyama Gakuin University, Sagamihara, Kanagawa 252-0206, Japan)
,
Uchitomi Naotaka
(Nagaoka University of Technology, Nagaoka, Niigata 940-2188, Japan)
,
Uchitomi Naotaka
(Center for Spintronics Research Network, Osaka University, Toyonaka, Osaka 560-8531, Japan)
資料名:
Journal of Crystal Growth
(Journal of Crystal Growth)
巻:
487
ページ:
34-39
発行年:
2018年
JST資料番号:
B0942A
ISSN:
0022-0248
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)