文献
J-GLOBAL ID:201802287816469320
整理番号:18A1211023
高電圧SoC応用のためのドレイン拡張FinFETデバイスの性能と信頼性の洞察【JST・京大機械翻訳】
Performance and reliability insights of drain extended FinFET devices for high voltage SoC applications
著者 (4件):
Kumar B Sampath
(Advanced Nano-electronic Device and Circuits Research Group, Department of Electronic Systems Engineering, Indian Institute of Science, Bangalore, India 560012)
,
Paul Milova
(Advanced Nano-electronic Device and Circuits Research Group, Department of Electronic Systems Engineering, Indian Institute of Science, Bangalore, India 560012)
,
Shrivastava Mayank
(Advanced Nano-electronic Device and Circuits Research Group, Department of Electronic Systems Engineering, Indian Institute of Science, Bangalore, India 560012)
,
Gossner Harald
(Intel Deutschland GmbH, Am Campeopn10-12,85576 Neubiberg, Germany)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2018
号:
ISPSD
ページ:
72-75
発行年:
2018年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)