文献
J-GLOBAL ID:201902211626144109
整理番号:19A0660526
高配向単分子層MOS_2連続膜のウエハスケール成長と移動【JST・京大機械翻訳】
Wafer-Scale Growth and Transfer of Highly-Oriented Monolayer MoS2 Continuous Films
著者 (29件):
Yu Hua
(Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, China)
,
Liao Mengzhou
(Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, China)
,
Zhao Wenjuan
(Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, China)
,
Liu Guodong
(Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, China)
,
Zhou X. J.
(Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, China)
,
Wei Zheng
(Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, China)
,
Xu Xiaozhi
(School of Physics, Peking University, China)
,
Liu Kaihui
(School of Physics, Peking University, China)
,
Liu Kaihui
(Collaborative Innovation Center of Quantum Matter, China)
,
Hu Zonghai
(School of Physics, Peking University, China)
,
Hu Zonghai
(Collaborative Innovation Center of Quantum Matter, China)
,
Deng Ke
(State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, P.R. China)
,
Zhou Shuyun
(State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, P.R. China)
,
Shi Jin-An
(Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, China)
,
Gu Lin
(Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, China)
,
Shen Cheng
(Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, China)
,
Zhang Tingting
(Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, China)
,
Du Luojun
(Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, China)
,
Du Luojun
(Department of physics, Renmin University of China, China)
,
Xie Li
(Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, China)
,
Zhu Jianqi
(Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, China)
,
Chen Wei
(College of Physics and Electronic Information, Gannan Normal University, Jiangxi, China)
,
Yang Rong
(Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, China)
,
Yang Rong
(Beijing Key Laboratory for Nanomaterials and Nanodevices, China)
,
Shi Dongxia
(Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, China)
,
Shi Dongxia
(Beijing Key Laboratory for Nanomaterials and Nanodevices, China)
,
Zhang Guangyu
(Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, China)
,
Zhang Guangyu
(Collaborative Innovation Center of Quantum Matter, China)
,
Zhang Guangyu
(Beijing Key Laboratory for Nanomaterials and Nanodevices, China)
資料名:
ACS Nano
(ACS Nano)
巻:
11
号:
12
ページ:
12001-12007
発行年:
2017年
JST資料番号:
W2326A
ISSN:
1936-0851
CODEN:
ANCAC3
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)