文献
J-GLOBAL ID:201902220953022915
整理番号:19A1415851
界面格子無秩序性を有するシリコンナノワイヤにおける増強されたニッケル化速度【JST・京大機械翻訳】
Enhanced nickelidation rate in silicon nanowires with interfacial lattice disorder
著者 (10件):
Hashimoto Shuichiro
(Faculty of Science and Engineering, Waseda University, Shinjuku, Tokyo 169-8555, Japan)
,
Yokogawa Ryo
(School of Science and Technology, Meiji University, Tama, Kawasaki 214-8571, Japan)
,
Oba Shunsuke
(Faculty of Science and Engineering, Waseda University, Shinjuku, Tokyo 169-8555, Japan)
,
Asada Shuhei
(Faculty of Science and Engineering, Waseda University, Shinjuku, Tokyo 169-8555, Japan)
,
Xu Taiyu
(Faculty of Science and Engineering, Waseda University, Shinjuku, Tokyo 169-8555, Japan)
,
Tomita Motohiro
(Faculty of Science and Engineering, Waseda University, Shinjuku, Tokyo 169-8555, Japan)
,
Ogura Atsushi
(School of Science and Technology, Meiji University, Tama, Kawasaki 214-8571, Japan)
,
Matsukawa Takashi
(National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan)
,
Masahara Meishoku
(National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan)
,
Watanabe Takanobu
(Faculty of Science and Engineering, Waseda University, Shinjuku, Tokyo 169-8555, Japan)
資料名:
Journal of Applied Physics
(Journal of Applied Physics)
巻:
122
号:
14
ページ:
144305-144305-7
発行年:
2017年
JST資料番号:
C0266A
ISSN:
0021-8979
CODEN:
JAPIAU
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)