文献
J-GLOBAL ID:201902224904071488
整理番号:19A2607992
改良された熱散逸によるQバンド応用のための高効率AlN/GaN HEMT【JST・京大機械翻訳】
High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation
著者 (12件):
Kabouche Riad
(Institut d’Electronique, de Microelectronique et de Nanotechnologie, University Lille, Avenue Poincare, Villeneuve d’Ascq, France)
,
Pecheux Romain
(Institut d’Electronique, de Microelectronique et de Nanotechnologie, University Lille, Avenue Poincare, Villeneuve d’Ascq, France)
,
Harrouche Kathia
(Institut d’Electronique, de Microelectronique et de Nanotechnologie, University Lille, Avenue Poincare, Villeneuve d’Ascq, France)
,
Okada Etienne
(Institut d’Electronique, de Microelectronique et de Nanotechnologie, University Lille, Avenue Poincare, Villeneuve d’Ascq, France)
,
Medjdoub Farid
(Institut d’Electronique, de Microelectronique et de Nanotechnologie, University Lille, Avenue Poincare, Villeneuve d’Ascq, France)
,
Derluyn Joff
(EpiGaN company, Kempische Steenweg 293, Hasselt, Belgium)
,
Degroote Stefan
(EpiGaN company, Kempische Steenweg 293, Hasselt, Belgium)
,
Germain Marianne
(EpiGaN company, Kempische Steenweg 293, Hasselt, Belgium)
,
Gucmann Filip
(H. H. Wills Physics Laboratory, University of Bristol, BS8 1TL, Bristol, United Kingdom)
,
Middleton Callum
(H. H. Wills Physics Laboratory, University of Bristol, BS8 1TL, Bristol, United Kingdom)
,
Pomeroy James W.
(H. H. Wills Physics Laboratory, University of Bristol, BS8 1TL, Bristol, United Kingdom)
,
Kuball Martin
(H. H. Wills Physics Laboratory, University of Bristol, BS8 1TL, Bristol, United Kingdom)
資料名:
International Journal of High Speed Electronics and Systems
(International Journal of High Speed Electronics and Systems)
巻:
28
号:
1-2
ページ:
1940003
発行年:
2019年
JST資料番号:
A1473A
ISSN:
0129-1564
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
シンガポール (SGP)
言語:
英語 (EN)