文献
J-GLOBAL ID:201902229048465830
整理番号:19A2699363
メモリデバイスにおける潜在的応用のための抵抗スイッチング材料としてのAg_10(As_40S_30Se_30)_90の電気特性【JST・京大機械翻訳】
Electrical Characteristics of Ag10(As40S30Se30)90 as Resistive Switching Material for Potential Application in Memory Devices
著者 (5件):
Cajko K. O.
(University of Novi Sad,Faculty of Sciences,Department of Physics,Trg Dositeja Obradovic ́a 4, Novi Sad,,Serbia,21000)
,
Sekulic D. L.
(University of Novi Sad,Faculty of Technical Sciences,Department of Power, Electronic and Telecommunication Engineering,Trg Dositeja Obradovic ́a 6, Novi Sad,,Serbia,21000)
,
Petrovic D. M.
(University of Novi Sad,Faculty of Sciences,Department of Physics,Trg Dositeja Obradovic ́a 4, Novi Sad,,Serbia,21000)
,
Ivetic T. B.
(University of Novi Sad,Faculty of Sciences,Department of Physics,Trg Dositeja Obradovic ́a 4, Novi Sad,,Serbia,21000)
,
Lukic-Petrovic S. R.
(University of Novi Sad,Faculty of Sciences,Department of Physics,Trg Dositeja Obradovic ́a 4, Novi Sad,,Serbia,21000)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2019
号:
MIEL
ページ:
173-176
発行年:
2019年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)