文献
J-GLOBAL ID:201902231654211382
整理番号:19A0299230
室温高圧処理により作製した欠陥含有CuGaTe_2の構造と熱電輸送解析【JST・京大機械翻訳】
Structure and thermoelectric transport analysis of defect-containing CuGaTe2 prepared by room-temperature high-pressure treatment
著者 (5件):
Fujii Yosuke
(Department of Physical Science, Graduate School of Science, Osaka Prefecture University, Sakai 599-8531, Japan)
,
Funashima Hiroki
(Department of Physics, Graduate School of Science, Kobe University, Kobe 675-0013, Japan)
,
Katayama-Yoshida Hiroshi
(Center for Spintronics Research Network, Graduate School of Engineering, The University of Tokyo, Tokyo 113-8656, Japan)
,
Yamada Ikuya
(Department of Materials Science, Graduate School of Engineering, Osaka Prefecture University, Sakai 599-8531, Japan)
,
Kosuga Atsuko
(Department of Physical Science, Graduate School of Science, Osaka Prefecture University, Sakai 599-8531, Japan)
資料名:
Journal of Applied Physics
(Journal of Applied Physics)
巻:
125
号:
3
ページ:
035105-035105-11
発行年:
2019年
JST資料番号:
C0266A
ISSN:
0021-8979
CODEN:
JAPIAU
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)