文献
J-GLOBAL ID:201902232314920534
整理番号:19A2564695
オプトエレクトロニクスおよびフォトニックデバイス応用のためのYb3+ドープおよび非ドープ2D-MOS_2薄膜の分光学的および構造的性質【JST・京大機械翻訳】
Spectroscopic and Structural Properties of Yb3+-Doped and Undoped 2D-Mos2 Thin Films for Optoelectronic and Photonic Device Applications
著者 (5件):
Maddi C.
(School of Chemical and Process engineering, Faculty of Engineering, University of Leeds, Leeds, UK)
,
Aswin J. R.
(Department of Physics, Indian Institute of Science Education and Research (IISER), Bhopal, India)
,
Adarsh K. V.
(Department of Physics, Indian Institute of Science Education and Research (IISER), Bhopal, India)
,
Scott A. J.
(School of Chemical and Process engineering, Faculty of Engineering, University of Leeds, Leeds, UK)
,
Jha Animesh
(School of Chemical and Process engineering, Faculty of Engineering, University of Leeds, Leeds, UK)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2019
号:
CLEO/Europe-EQEC
ページ:
1
発行年:
2019年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)