文献
J-GLOBAL ID:201902239327096646
整理番号:19A2176542
高性能非晶質In-Ga-Zn-O薄膜トランジスタ用の低温高k溶液処理ハイブリッドゲート絶縁体【JST・京大機械翻訳】
Low Temperature High-k Solution Processed Hybrid Gate Insulator for High Performance Amorphous In-Ga-Zn-O Thin-Film Transistors
著者 (7件):
Kesorn Ployrung
(Division of Science and Technology, Nara Institute of Science and Technology, Ikoma, Nara 630-0192, Japan)
,
Bermundo Juan Paolo
(Division of Science and Technology, Nara Institute of Science and Technology, Ikoma, Nara 630-0192, Japan)
,
Yoshida Naofumi
(PM-Display Patterning Material Research, Merck Performance Material Ltd., Kakegawa-shi, Shizuoka 437-1412, Japan)
,
Nonaka Toshiaki
(PM-Display Patterning Material Research, Merck Performance Material Ltd., Kakegawa-shi, Shizuoka 437-1412, Japan)
,
Fujii Mami N.
(Division of Science and Technology, Nara Institute of Science and Technology, Ikoma, Nara 630-0192, Japan)
,
Ishikawa Yasuaki
(Division of Science and Technology, Nara Institute of Science and Technology, Ikoma, Nara 630-0192, Japan)
,
Uraoka Yukiharu
(Division of Science and Technology, Nara Institute of Science and Technology, Ikoma, Nara 630-0192, Japan)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2019
号:
AM-FPD
ページ:
1-2
発行年:
2019年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)