文献
J-GLOBAL ID:201902246835069714
整理番号:19A1266265
ヘテロ構造としてのGaAs/AlxGa[数式:原文を参照]に基づく一次抵抗標準のための量子Hall素子【JST・京大機械翻訳】
Quantum Hall devices for the primary resistance standard based on the GaAs/AlxGa[Formula : see text] As heterostructure
著者 (5件):
Wang Xueshen
(Key Laboratory of the Electrical Quantum Standard of AQSIQ National Institute of Metrology (NIM), Beijing, P. R. China)
,
Zhong Qing
(Key Laboratory of the Electrical Quantum Standard of AQSIQ National Institute of Metrology (NIM), Beijing, P. R. China)
,
Li Jinjin
(Key Laboratory of the Electrical Quantum Standard of AQSIQ National Institute of Metrology (NIM), Beijing, P. R. China)
,
Zhong Yuan
(Key Laboratory of the Electrical Quantum Standard of AQSIQ National Institute of Metrology (NIM), Beijing, P. R. China)
,
Zhao Mengke
(Key Laboratory of the Electrical Quantum Standard of AQSIQ National Institute of Metrology (NIM), Beijing, P. R. China)
資料名:
International Journal of Modern Physics B. Condensed Matter Physics, Statiscal Physics, Applied Physics
(International Journal of Modern Physics B. Condensed Matter Physics, Statiscal Physics, Applied Physics)
巻:
33
号:
8
ページ:
1950057
発行年:
2019年
JST資料番号:
T0396A
ISSN:
0217-9792
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
シンガポール (SGP)
言語:
英語 (EN)