文献
J-GLOBAL ID:201902252529173852
整理番号:19A0801098
シリコンオンインシュレータ画素デバイスの放射線硬度【JST・京大機械翻訳】
Radiation hardness of silicon-on-insulator pixel devices
著者 (11件):
Hara Kazuhiko
(University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan)
,
Aoyagi Wataru
(University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan)
,
Sekigawa Daisuke
(University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan)
,
Iwanami Shikie
(University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan)
,
Honda Shunsuke
(University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan)
,
Tsuboyama Toru
(High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki 305-0801, Japan)
,
Arai Yasuo
(High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki 305-0801, Japan)
,
Kurachi Ikuo
(High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki 305-0801, Japan)
,
Miyoshi Toshinobu
(High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki 305-0801, Japan)
,
Yamada Miho
(High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki 305-0801, Japan)
,
Ikegami Yoichi
(High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki 305-0801, Japan)
資料名:
Nuclear Instruments & Methods in Physics Research. Section A. Accelerators, Spectrometers, Detectors and Associated Equipment
(Nuclear Instruments & Methods in Physics Research. Section A. Accelerators, Spectrometers, Detectors and Associated Equipment)
巻:
924
ページ:
426-430
発行年:
2019年
JST資料番号:
D0208B
ISSN:
0168-9002
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)