文献
J-GLOBAL ID:201902257054933069
整理番号:19A1893510
溶液処理金属酸化物薄膜トランジスタの最近の進歩【JST・京大機械翻訳】
Recent Advances of Solution-Processed Metal Oxide Thin-Film Transistors
著者 (5件):
Xu Wangying
(College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen Key Laboratory of Special Functional Materials, Shenzhen University, China)
,
Li Hao
(Department of Electronic Engineering, Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China)
,
Xu Jian-Bin
(Department of Electronic Engineering, Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China)
,
Wang Lei
(Department of Electronic Engineering, Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China)
,
Wang Lei
(Department of Applied Physics, School of Physical and Mathematical Sciences, Nanjing Tech University, China)
資料名:
ACS Applied Materials & Interfaces
(ACS Applied Materials & Interfaces)
巻:
10
号:
31
ページ:
25878-25901
発行年:
2018年
JST資料番号:
W2329A
ISSN:
1944-8244
CODEN:
AAMICK
資料種別:
逐次刊行物 (A)
記事区分:
文献レビュー
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)