文献
J-GLOBAL ID:201902273208930305
整理番号:19A0863036
MOVPE成長GaAs:Nδドープ超格子構造における無放射再結合中心の光ルミネセンス特性評価【JST・京大機械翻訳】
Photoluminescence characterization of nonradiative recombination centers in MOVPE grown GaAs:N δ-doped superlattice structure
著者 (7件):
Haque Md Dulal
(Graduate School of Science and Engineering, Saitama University, Saitama, 338-8570, Japan)
,
Haque Md Dulal
(Department of Electronics and Communication Engineering, Hajee Mohammad Danesh Science and Technology University, Dinajpur, 5200, Bangladesh)
,
Kamata Norihiko
(Graduate School of Science and Engineering, Saitama University, Saitama, 338-8570, Japan)
,
Islam A.Z.M. Touhidul
(Department of Electrical and Electronic Engineering, University of Rajshahi, Rajshahi, Bangladesh)
,
Honda Zentaro
(Graduate School of Science and Engineering, Saitama University, Saitama, 338-8570, Japan)
,
Yagi Shuhei
(Graduate School of Science and Engineering, Saitama University, Saitama, 338-8570, Japan)
,
Yaguchi Hiroyuki
(Graduate School of Science and Engineering, Saitama University, Saitama, 338-8570, Japan)
資料名:
Optical Materials
(Optical Materials)
巻:
89
ページ:
521-527
発行年:
2019年
JST資料番号:
W0468A
ISSN:
0925-3467
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)