文献
J-GLOBAL ID:201902280420294772
整理番号:19A2817887
有機トランジスタにおける接触抵抗の金属酸化物誘起還元の理解【JST・京大機械翻訳】
Understanding the metal-oxides induced reduction of the contact resistance in organic transistors
著者 (7件):
Donnhaeuser Shabnam
(Chair for Electron Devices and Integrated Circuits, Technische Universitaet Dresden, Germany)
,
Minagawa Masahiro
(Department of Electronic Control Engineering, Nagaoka National College of Technology, Niigata, Japan)
,
Minagawa Masahiro
(Department of Chemical Engineering, Stanford University, 443 Via Ortega, Stanford, CA 94305-4125, USA)
,
Blawid Stefan
(Department of Electrical Engineering, Universidade de Brasilia, 70910-900 Brasilia-DF, Brazil)
,
Claus Martin
(Chair for Electron Devices and Integrated Circuits, Technische Universitaet Dresden, Germany)
,
Claus Martin
(Center for Advancing Electronics Dresden, Technische Universitaet Dresden, Germany)
,
Claus Martin
(Department of Chemical Engineering, Stanford University, 443 Via Ortega, Stanford, CA 94305-4125, USA)
資料名:
Solid-State Electronics
(Solid-State Electronics)
巻:
163
ページ:
Null
発行年:
2020年
JST資料番号:
H0225A
ISSN:
0038-1101
資料種別:
逐次刊行物 (A)
記事区分:
文献レビュー
発行国:
イギリス (GBR)
言語:
英語 (EN)