文献
J-GLOBAL ID:201902285482275261
整理番号:19A2365411
CrGeTe_3基板上に成長させた(Bi_xSb_1-x)_2Te_3薄膜における高近接性誘起異常Hall効果の記録【JST・京大機械翻訳】
Record High-Proximity-Induced Anomalous Hall Effect in (BixSb1-x)2Te3 Thin Film Grown on CrGeTe3 Substrate
著者 (9件):
Yao Xiong
(Center for Quantum Materials Synthesis and Department of Physics and Astronomy, Rutgers, The State University of New Jersey, New Jersey, United States)
,
Gao Bin
(Department of Physics and Astronomy, Rice University, Texas, United States)
,
Han Myung-Geun
(Condensed Matter Physics and Materials Science, Brookhaven National Laboratory, New York, United States)
,
Jain Deepti
(Department of Physics and Astronomy, Rutgers, The State University of New Jersey, New Jersey, United States)
,
Moon Jisoo
(Department of Physics and Astronomy, Rutgers, The State University of New Jersey, New Jersey, United States)
,
Kim Jae Wook
(Department of Physics and Astronomy, Rutgers, The State University of New Jersey, New Jersey, United States)
,
Zhu Yimei
(Condensed Matter Physics and Materials Science, Brookhaven National Laboratory, New York, United States)
,
Cheong Sang-Wook
(Center for Quantum Materials Synthesis and Department of Physics and Astronomy, Rutgers, The State University of New Jersey, New Jersey, United States)
,
Oh Seongshik
(Center for Quantum Materials Synthesis and Department of Physics and Astronomy, Rutgers, The State University of New Jersey, New Jersey, United States)
資料名:
Nano Letters
(Nano Letters)
巻:
19
号:
7
ページ:
4567-4573
発行年:
2019年
JST資料番号:
W1332A
ISSN:
1530-6984
CODEN:
NALEFD
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)