文献
J-GLOBAL ID:202002210774049299
整理番号:20A0495684
金属誘起結晶化多結晶シリコン薄膜トランジスタにおけるデバイス性能とホットキャリア不安定性に及ぼす活性層厚さの影響【JST・京大機械翻訳】
Effect of Active Layer Thickness on Device Performance and Hot Carrier Instability in Metal Induced Crystallized Polycrystalline Silicon Thin-Film Transistors
著者 (10件):
Jiang Zhendong
(Shenzhen University,Institute of Microscale Optoelectronics (IMO),Shenzhen,China,518060)
,
Kwok Hoi-Sing
(The Hong Kong University of Science and Technology,State Key Laboratory of Advanced Displays and Optoelectronics Technologies,Kowloon,Hong Kong,Clear Water Bay)
,
Zhang Meng
(Shenzhen University,Institute of Microscale Optoelectronics (IMO),Shenzhen,China,518060)
,
Ma Xiaotong
(Shenzhen University,Institute of Microscale Optoelectronics (IMO),Shenzhen,China,518060)
,
Yan Yan
(Shenzhen University,Institute of Microscale Optoelectronics (IMO),Shenzhen,China,518060)
,
Li Guijun
(Shenzhen University,Institute of Microscale Optoelectronics (IMO),Shenzhen,China,518060)
,
Deng Sunbin
(The Hong Kong University of Science and Technology,State Key Laboratory of Advanced Displays and Optoelectronics Technologies,Kowloon,Hong Kong,Clear Water Bay)
,
Zhou Wei
(The Hong Kong University of Science and Technology,State Key Laboratory of Advanced Displays and Optoelectronics Technologies,Kowloon,Hong Kong,Clear Water Bay)
,
Chen Rongsheng
(The Hong Kong University of Science and Technology,State Key Laboratory of Advanced Displays and Optoelectronics Technologies,Kowloon,Hong Kong,Clear Water Bay)
,
Wong Man
(The Hong Kong University of Science and Technology,State Key Laboratory of Advanced Displays and Optoelectronics Technologies,Kowloon,Hong Kong,Clear Water Bay)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2019
号:
IPFA
ページ:
1-4
発行年:
2019年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)