文献
J-GLOBAL ID:202002214259135265
整理番号:20A0910344
応力設計HfZrO_xによる3Dスケーラブル,ウェークアップフリー,高信頼性FRAM技術【JST・京大機械翻訳】
3D Scalable, Wake-up Free, and Highly Reliable FRAM Technology with Stress-Engineered HfZrOx
著者 (16件):
Lin Y. D.
(Industrial Technology Research Institute,EOSL,Hsinchu,Taiwan)
,
Sheu S. S.
(Industrial Technology Research Institute,EOSL,Hsinchu,Taiwan)
,
Hou T. H.
(Industrial Technology Research Institute,EOSL,Hsinchu,Taiwan)
,
Lo W. C.
(Industrial Technology Research Institute,EOSL,Hsinchu,Taiwan)
,
Lee M. H.
(National Taiwan Normal University,Institute of Electro-Optical Science and Technology,Taipei,Taiwan)
,
Chang M. F.
(National Tsing Hua University,Institute of Electronics Engineering,Hsinchu,Taiwan)
,
King Y. C.
(National Tsing Hua University,Institute of Electronics Engineering,Hsinchu,Taiwan)
,
Lin C. J.
(National Tsing Hua University,Institute of Electronics Engineering,Hsinchu,Taiwan)
,
Lee H. Y.
(Industrial Technology Research Institute,EOSL,Hsinchu,Taiwan)
,
Tang Y. T.
(Taiwan Semiconductor Research Institute,Hsinchu,Taiwan)
,
Yeh P. C.
(Industrial Technology Research Institute,EOSL,Hsinchu,Taiwan)
,
Yang H. Y.
(Industrial Technology Research Institute,EOSL,Hsinchu,Taiwan)
,
Yeh P. S.
(Industrial Technology Research Institute,EOSL,Hsinchu,Taiwan)
,
Wang C. Y.
(Industrial Technology Research Institute,EOSL,Hsinchu,Taiwan)
,
Su J. W.
(Industrial Technology Research Institute,EOSL,Hsinchu,Taiwan)
,
Li S. H.
(Industrial Technology Research Institute,EOSL,Hsinchu,Taiwan)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2019
号:
IEDM
ページ:
15.3.1-15.3.4
発行年:
2019年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)