文献
J-GLOBAL ID:202002222419241248
整理番号:20A0219064
個々のZnOナノロッドp-n接合における均一抵抗スイッチング【JST・京大機械翻訳】
Homogeneous Resistive Switching in Individual ZnO Nanorod p-n Junctions
著者 (5件):
Tiagulskyi S.
(Institute of Photonics and Electronics of the Czech Academy of Sciences,Chaberska 57, Prague 8,Czech Republic,18251)
,
Yatskiv R.
(Institute of Photonics and Electronics of the Czech Academy of Sciences,Chaberska 57, Prague 8,Czech Republic,18251)
,
Faitova H.
(Institute of Photonics and Electronics of the Czech Academy of Sciences,Chaberska 57, Prague 8,Czech Republic,18251)
,
Vanis J.
(Institute of Photonics and Electronics of the Czech Academy of Sciences,Chaberska 57, Prague 8,Czech Republic,18251)
,
Grym J.
(Institute of Photonics and Electronics of the Czech Academy of Sciences,Chaberska 57, Prague 8,Czech Republic,18251)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2019
号:
CAS
ページ:
289-292
発行年:
2019年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)