文献
J-GLOBAL ID:202002235914703593
整理番号:20A0656555
InGaO/InZnO積層チャネルを有する高性能バックチャネルエッチング薄膜トランジスタ【JST・京大機械翻訳】
High-Performance Back-Channel-Etched Thin-Film Transistors with an InGaO/InZnO Stacked Channel
著者 (7件):
Zhao Mingjie
(Fujian Key Laboratory of Optoelectronic Technology and Devices, Key Laboratory for Optoelectronic Technology of Fujian Higher Education, Xiamen University of Technology, Xiamen, 361024, P. R. China)
,
Zhang Zewang
(Fujian Key Laboratory of Optoelectronic Technology and Devices, Key Laboratory for Optoelectronic Technology of Fujian Higher Education, Xiamen University of Technology, Xiamen, 361024, P. R. China)
,
Zhang Zewang
(College of Information Science and Electronic Engineer, Polytechnic Institute, Zhejiang University, Hangzhou, 310058, P. R. China)
,
Xu Yingchao
(Fujian Key Laboratory of Optoelectronic Technology and Devices, Key Laboratory for Optoelectronic Technology of Fujian Higher Education, Xiamen University of Technology, Xiamen, 361024, P. R. China)
,
Xu Daisheng
(Fujian Key Laboratory of Optoelectronic Technology and Devices, Key Laboratory for Optoelectronic Technology of Fujian Higher Education, Xiamen University of Technology, Xiamen, 361024, P. R. China)
,
Zhang Jiyan
(Fujian Key Laboratory of Optoelectronic Technology and Devices, Key Laboratory for Optoelectronic Technology of Fujian Higher Education, Xiamen University of Technology, Xiamen, 361024, P. R. China)
,
Huang Zhangchao
(Fujian Key Laboratory of Optoelectronic Technology and Devices, Key Laboratory for Optoelectronic Technology of Fujian Higher Education, Xiamen University of Technology, Xiamen, 361024, P. R. China)
資料名:
Physica Status Solidi. A. Applications and Materials Science
(Physica Status Solidi. A. Applications and Materials Science)
巻:
217
号:
5
ページ:
e1900773
発行年:
2020年
JST資料番号:
D0774A
ISSN:
1862-6300
CODEN:
PSSABA
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)