文献
J-GLOBAL ID:202002237149894763
整理番号:20A0484286
高周波マグネトロンスパッタリングにより作製したCu_4O_3薄膜における窒素ドーピング効果【JST・京大機械翻訳】
Nitrogen Doping Effect in Cu4O3 Thin Films Fabricated by Radio Frequency Magnetron Sputtering
著者 (8件):
Patwary Md Abdul Majed
(Department of Electrical and Electronic Engineering, Saga University, 1 Honjo, Saga, 840-8502, Japan)
,
Saito Katsuhiko
(Department of Electrical and Electronic Engineering, Saga University, 1 Honjo, Saga, 840-8502, Japan)
,
Guo Qixin
(Department of Electrical and Electronic Engineering, Saga University, 1 Honjo, Saga, 840-8502, Japan)
,
Tanaka Tooru
(Department of Electrical and Electronic Engineering, Saga University, 1 Honjo, Saga, 840-8502, Japan)
,
Man Yu Kin
(Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong)
,
Man Yu Kin
(Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA)
,
Walukiewicz Wladek
(Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA)
,
Walukiewicz Wladek
(Department of Materials Science and Engineering, University of California at Berkeley, Berkeley, CA, 94720, USA)
資料名:
Physica Status Solidi. B. Basic Solid State Physics
(Physica Status Solidi. B. Basic Solid State Physics)
巻:
257
号:
2
ページ:
e1900363
発行年:
2020年
JST資料番号:
C0599A
ISSN:
0370-1972
CODEN:
PSSBBD
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)