文献
J-GLOBAL ID:202002261132828713
整理番号:20A0573337
高品質グラフェン/六方晶系窒化ホウ素van der Waalsヘテロ構造のための無気泡移動技術【JST・京大機械翻訳】
Bubble-Free Transfer Technique for High-Quality Graphene/Hexagonal Boron Nitride van der Waals Heterostructures
著者 (12件):
Iwasaki Takuya
(International Center for Young Scientists (ICYS), National Institute for Materials Science (NIMS), Ibaraki, Japan)
,
Endo Kosuke
(International Center for Materials Nanoarchitectonics (WPI-MANA), NIMS, Ibaraki, Japan)
,
Endo Kosuke
(School of Science & Technology, Meiji University, Japan)
,
Watanabe Eiichiro
(Nanofabrication Platform, NIMS, Ibaraki, Japan)
,
Tsuya Daiju
(Nanofabrication Platform, NIMS, Ibaraki, Japan)
,
Morita Yoshifumi
(Faculty of Engineering, Gunma University, Gunma, Japan)
,
Nakaharai Shu
(International Center for Materials Nanoarchitectonics (WPI-MANA), NIMS, Ibaraki, Japan)
,
Noguchi Yutaka
(School of Science & Technology, Meiji University, Japan)
,
Wakayama Yutaka
(International Center for Materials Nanoarchitectonics (WPI-MANA), NIMS, Ibaraki, Japan)
,
Watanabe Kenji
(Research Center for Functional Materials, NIMS, Ibaraki, Japan)
,
Taniguchi Takashi
(Research Center for Functional Materials, NIMS, Ibaraki, Japan)
,
Moriyama Satoshi
(International Center for Materials Nanoarchitectonics (WPI-MANA), NIMS, Ibaraki, Japan)
資料名:
ACS Applied Materials & Interfaces
(ACS Applied Materials & Interfaces)
巻:
12
号:
7
ページ:
8533-8538
発行年:
2020年
JST資料番号:
W2329A
ISSN:
1944-8244
CODEN:
AAMICK
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)