文献
J-GLOBAL ID:202002272920761808
整理番号:20A0950882
Siウエハ接合プロセスのためのSiO_2上のMn障壁層の光電子顕微鏡研究【JST・京大機械翻訳】
Photoelectroscopic Study of Mn Barrier Layer on SiO2 for Si Wafer Bonding Process
著者 (7件):
Nagata Takahiro
(International Center for Materials Nanoarchitectonics, National Institute for Materials Science,Tsukuba,Japan)
,
Tsumura Kazumichi
(Corporate Research & Development Center, Toshiba corporation,Kawasaki,Japan)
,
Nakamura Kenro
(Corporate Research & Development Center, Toshiba corporation,Kawasaki,Japan)
,
Uchida Kengo
(Corporate Research & Development Center, Toshiba corporation,Kawasaki,Japan)
,
Kawakita Jin
(Research Center for Functional Materials, National Institute for Materials Science,Tsukuba,Japan)
,
Chikyow Toyohiro
(National Institute for Materials Science,Research and Services Division of Materials Data and Integrated System,Tsukuba,Japan)
,
Higashi Kazuyuki
(Corporate Research & Development Center, Toshiba corporation,Kawasaki,Japan)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2019
号:
3DIC
ページ:
1-4
発行年:
2019年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)