文献
J-GLOBAL ID:202002278529001356
整理番号:20A0787170
Si基板上に成長させたInNおよびGaNベースのnanopillar結晶の垂直整列【JST・京大機械翻訳】
Vertical alignment of InN- and GaN-based nanopillar crystals grown on a multicrystalline Si substrate
著者 (6件):
Sato Yuichi
(Graduate School of Engineering Science, Akita University, 1-1 Tegata-gakuen, Akita 010-8502, Japan)
,
Saito Sora
(Graduate School of Engineering Science, Akita University, 1-1 Tegata-gakuen, Akita 010-8502, Japan)
,
Shiraishi Koki
(Graduate School of Engineering Science, Akita University, 1-1 Tegata-gakuen, Akita 010-8502, Japan)
,
Taniguchi Shingo
(Graduate School of Engineering Science, Akita University, 1-1 Tegata-gakuen, Akita 010-8502, Japan)
,
Izuka Yosuke
(Graduate School of Engineering Science, Akita University, 1-1 Tegata-gakuen, Akita 010-8502, Japan)
,
Saito Tsubasa
(Graduate School of Engineering Science, Akita University, 1-1 Tegata-gakuen, Akita 010-8502, Japan)
資料名:
Journal of Crystal Growth
(Journal of Crystal Growth)
巻:
537
ページ:
Null
発行年:
2020年
JST資料番号:
B0942A
ISSN:
0022-0248
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)