文献
J-GLOBAL ID:202002278694022281
整理番号:20A1884321
ダイヤモンド垂直型Schottky障壁ダイオードにおけるキラー欠陥の抑制
Suppression of killer defects in diamond vertical-type Schottky barrier diodes
著者 (6件):
Kobayashi Atsushi
(Diamond Materials Team, Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan)
,
Kobayashi Atsushi
(Department of Chemical Engineering, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai, Osaka 599-8531, Japan)
,
Ohmagari Shinya
(Diamond Materials Team, Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan)
,
Umezawa Hitoshi
(Diamond Materials Team, Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan)
,
Takeuchi Daisuke
(Diamond Materials Team, Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan)
,
Saito Takeyasu
(Department of Chemical Engineering, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai, Osaka 599-8531, Japan)
資料名:
Japanese Journal of Applied Physics
(Japanese Journal of Applied Physics)
巻:
59
号:
SG
ページ:
SGGD10 (4pp)
発行年:
2020年04月
JST資料番号:
G0520B
ISSN:
0021-4922
CODEN:
JJAPB6
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)