文献
J-GLOBAL ID:202002283080823580
整理番号:20A0388401
トップ電極により変調されたSnO_2ミクロスフェア膜の整流抵抗スイッチング挙動【JST・京大機械翻訳】
Rectifying resistance switching behaviors of SnO2 microsphere films modulated by top electrodes
著者 (8件):
Yuan Rongchun
(College of Physical Science and Technology, Yangzhou University, Yangzhou, 225002, China)
,
Xia Weiwei
(College of Physical Science and Technology, Yangzhou University, Yangzhou, 225002, China)
,
Xu Mengxue
(College of Physical Science and Technology, Yangzhou University, Yangzhou, 225002, China)
,
Miao Zhilei
(College of Physical Science and Technology, Yangzhou University, Yangzhou, 225002, China)
,
Wu Shudong
(College of Physical Science and Technology, Yangzhou University, Yangzhou, 225002, China)
,
Zhang Xiuyun
(College of Physical Science and Technology, Yangzhou University, Yangzhou, 225002, China)
,
He Junhui
(College of Physical Science and Technology, Yangzhou University, Yangzhou, 225002, China)
,
Wang Qiang
(College of Physical Science and Technology, Yangzhou University, Yangzhou, 225002, China)
資料名:
Current Applied Physics
(Current Applied Physics)
巻:
20
号:
3
ページ:
431-437
発行年:
2020年
JST資料番号:
W1579A
ISSN:
1567-1739
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)