文献
J-GLOBAL ID:202002287761463962
整理番号:20A2093229
GaAs/GaAsBiコア-マルチシェルナノワイヤにおける双晶欠陥誘起変形とBi偏析【JST・京大機械翻訳】
Twin defect-triggered deformations and Bi segregation in GaAs/GaAsBi core-multishell nanowires
著者 (6件):
Matsuda Teruyoshi
(Graduate School of Science and Engineering, Ehime University, 3 Bunkyo-cho, Matsuyama, Ehime 790-8577, Japan)
,
Takada Kyohei
(Graduate School of Science and Engineering, Ehime University, 3 Bunkyo-cho, Matsuyama, Ehime 790-8577, Japan)
,
Yano Kohsuke
(Graduate School of Science and Engineering, Ehime University, 3 Bunkyo-cho, Matsuyama, Ehime 790-8577, Japan)
,
Shimomura Satoshi
(Graduate School of Science and Engineering, Ehime University, 3 Bunkyo-cho, Matsuyama, Ehime 790-8577, Japan)
,
Shimizu Yumiko
(Toray Research Center, 3-3-7 Sonoyama, Otsu, Shiga 520-8567, Japan)
,
Ishikawa Fumitaro
(Graduate School of Science and Engineering, Ehime University, 3 Bunkyo-cho, Matsuyama, Ehime 790-8577, Japan)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
117
号:
11
ページ:
113105-113105-4
発行年:
2020年
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)