文献
J-GLOBAL ID:202002288627106476
整理番号:20A0818398
ゲート誘電体と不動態化層としてその場SiN_xを持つAlGaN/GaN MIS-HEMT【JST・京大機械翻訳】
AlGaN/GaN MIS-HEMTs with In Situ SiNx as Gate Dielectric and Passivation Layer
著者 (4件):
Chen Jingxiong
(Engineering Laboratory for Wide Bandgap Semiconductor Materials and Devices of Guangdong Province, School of Electronic and Information Engineering, South China University of Technology,Guangzhou,China,510640)
,
Zhou Quanbin
(Engineering Laboratory for Wide Bandgap Semiconductor Materials and Devices of Guangdong Province, School of Electronic and Information Engineering, South China University of Technology,Guangzhou,China,510640)
,
Liu Xiaoyi
(Engineering Laboratory for Wide Bandgap Semiconductor Materials and Devices of Guangdong Province, School of Electronic and Information Engineering, South China University of Technology,Guangzhou,China,510640)
,
Wang Hong
(Zhongshan Institute of Modern Industrial Technology, South China University of Technology,Zhongshan,China,528437)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2019
号:
ICMMT
ページ:
1-3
発行年:
2019年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)